7 November 1983 Status Of X-Ray Lithography At H-P
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Abstract
The various aspects of X-ray lithography at H-P in terms of mask-fabrication, resist development, alignment systems and source development are reviewed in their present status. Masks are being developed, flat within one micron, and with very low substrate defect density. PCMS is described as an X-ray resist with moderate sensitivity, but very good physical properties. Advanced source cooling techniques are expected to allow power densities up to 60KW/cm2, enhancing the source brightness. A very compact automatic exposure system is described, with alignment accuracy of .15 micron RMS.
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A. P. Neukermans, A. P. Neukermans, } "Status Of X-Ray Lithography At H-P", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935099; https://doi.org/10.1117/12.935099
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