7 June 2000 Femtosecond pulse laser machining of InP wafers
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Proceedings Volume 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V; (2000) https://doi.org/10.1117/12.387593
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States
Abstract
Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerzy M. Wrobel, Jerzy M. Wrobel, Joern Bonse, Joern Bonse, Joerg Krueger, Joerg Krueger, Wolfgang Kautek, Wolfgang Kautek, } "Femtosecond pulse laser machining of InP wafers", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387593; https://doi.org/10.1117/12.387593
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