7 June 2000 Laser-based microscale bending for microelectronics fabrication
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Proceedings Volume 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V; (2000) https://doi.org/10.1117/12.387567
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States
Abstract
This paper presents experimental and theoretical work on laser-based microscale bending. High precision bending of stainless steel and ceramic specimens is achieved with the use of a pulsed or a CW laser. Experiments are conducted to study the bending behavior of stainless steel and ceramics due to laser irradiation. The amount of bending is correlated with various laser and processing parameters. A theoretical model of the laser bending process is presented base don thermo-elasticity/plasticity. The laser bending process is explained as the result of the laser-induced non- uniform distribution of the residual strain. Numerical simulations are carried out to calculate the laser-induced temperature field, the residual stress field, and the amount of bending for both pulsed and CW laser irradiation. Applications of the laser bending technique in microelectronics fabrication are discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xianfan Xu, "Laser-based microscale bending for microelectronics fabrication", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387567; https://doi.org/10.1117/12.387567
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