7 June 2000 Novel thin-film deposition method and system with IR-FEL
Author Affiliations +
Proceedings Volume 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V; (2000) https://doi.org/10.1117/12.387589
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States
Abstract
We propose a novel method for thin film deposition with an IR-FEL using the IR-FEL wavelength tunability in infrared region. This is an unique method in which only the vapor deposition molecule is activated by applying laser of vibrational excitation wavelength of the vapor deposition molecule on the substrate surface, when the thin film intends to deposit on the substrate. We developed two equipments in order to realize and evaluate the new method. One is IR-FEL assisted RF sputter deposition chamber system, the other is IR-FEL assisted laser ablation chamber system. Moreover using the former equipment, we carry out the preliminary experiment on the preparation of ITO (In-Sn-O) thin film.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masato Yasumoto, Masato Yasumoto, Norimasa Umesaki, Norimasa Umesaki, Takio Tomimasu, Takio Tomimasu, Akira Ishizu, Akira Ishizu, Kunio Awazu, Kunio Awazu, } "Novel thin-film deposition method and system with IR-FEL", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387589; https://doi.org/10.1117/12.387589
PROCEEDINGS
6 PAGES


SHARE
Back to Top