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7 June 2000 Production of photoluminescent Si-based nanostructures by laser ablation: effects of ablation and postdeposition conditions
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Proceedings Volume 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V; (2000) https://doi.org/10.1117/12.387555
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States
Abstract
A method of Pulsed Laser Ablation (PLA) from a Si target in an inert He ambient has been applied in combination with different post-deposition oxidation procedures for the fabrication of Si/SiOx nanocrystalline structures on Si substrates. After the growth of a thin natural oxide layer on the film surface, the structures exhibited a strong visible photoluminescence (PL), which remained stable even under a prolonged continuous irradiation of the sample by an excitation laser light. The peak energy of the PL spectra could be finely varied between 1.58 and 2.15 eV by a change in the residual gas pressure during the deposition process. An effect of thermal annealing on the PL properties of the Si/SiOx films has been examined and compared with the results for Si-based films produced by thermal evaporation from a Si target in vacuum. For both deposition techniques, the thermal annealing led to a dramatic change of PL properties giving rise to a fixed PL peak around 2.2 eV. Photoluminescent properties of particles formed by PLA with natural oxidation were different than those of thermally oxidized amorphous Si films. A recombination through oxygen- related compounds in the upper film layer is considered as the most probable mechanism of PL.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrei V. Kabashin, M. Charbonneau-Lefort, Michel Meunier, and Richard Leonelli "Production of photoluminescent Si-based nanostructures by laser ablation: effects of ablation and postdeposition conditions", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); https://doi.org/10.1117/12.387555
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