24 March 2000 Multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator
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Proceedings Volume 3936, Integrated Optics Devices IV; (2000) https://doi.org/10.1117/12.379966
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We demonstrate a GaAs/AlGaAs multiple-quantum-well in-line fiber optic intensity modulator. Based on evanescent wave coupling between a GaAs/AlGaAs anti-resonant reflective optical waveguide and a side-polished single mode fiber, this device concept combines the inherent advantages of in- line fiber devices with high-performance GaAs integrated optoelectronics. The GaAs waveguide utilizes distributed Bragg reflector mirrors, which are designed to provide maximum reflection at a given more angle, to phase-match to the low-index fiber. Intensity modulation of the transmitted light through the fiber is achieved by changing the complex propagation constant of the GaAs waveguide through the quantum-confined Stark effect. Typical device shows an on/off ratio of 4:1, with an applied voltage of 9V. Calculations show that with a longer interaction region, an on/off ratio of more than 40dB is achievable with the same applied voltage.
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Erji Mao, Erji Mao, Diego R. Yankelevich, Diego R. Yankelevich, Christopher W. Coldren, Christopher W. Coldren, Olav Solgaard, Olav Solgaard, Andre Knoesen, Andre Knoesen, James S. Harris, James S. Harris, } "Multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator", Proc. SPIE 3936, Integrated Optics Devices IV, (24 March 2000); doi: 10.1117/12.379966; https://doi.org/10.1117/12.379966

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