Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry

Bulent Cakmak; Siyuan Yu; Richard V. Penty; Ian H. White

doi:10.1117/12.379944

24 March 2000 Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry

Bulent Cakmak, Siyuan Yu, Richard V. Penty, Ian H. White

Proceedings Volume 3936, Integrated Optics Devices IV; (2000) https://doi.org/10.1117/12.379944
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While Argon alone is used for the IBE process, the CAIBE is carried out by using Ar/H₂CH₄. The realization of CAIBE in Ar/H₂ atmosphere is also achieved for the first time. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (V_acc), discharge current (I_dis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H₂ chemistry. The etch rate of the InP structures is studied as a function of the I_dis and the V_acc. A maximum etch rate of 700 angstrom/min is observed for 1.75kV acceleration voltage and 45 mA discharge current at 30 degrees ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement between those is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al₂O₃ and Titanium in the case of CAIBE mode. The most anisotropic structure of 83 degrees is performed by using the Ti mask.

Citation Download Citation

Bulent Cakmak, Siyuan Yu, Richard V. Penty, and Ian H. White "Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry", Proc. SPIE 3936, Integrated Optics Devices IV, (24 March 2000); https://doi.org/10.1117/12.379944

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