17 April 2000 Design and performance of nitride-based UV LEDs
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Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382842
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
In this paper, we overview several of the critical materials growth, design and performance issues for nitride-based UV (less than 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys (InGaN, AlInGaN). We discuss the trade-off between the challenging growth of high Al containing alloys (AlGaN, AlGaInN), and the need for sufficient carrier confinement in UV heterostructures. Carrier leakage for various composition AlGaN barriers is examined through a calculation of the total unconfined carrier density in the quantum well system. We compare the performance of two distinct UV LED structures: GaN/AlGaN quantum well LEDs for (lambda) less than 360 nm emission, and InGaN/AlGaInN quantum well LEDs for 370 nm less than (lambda) less than 390 nm emission.
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Mary Hagerott Crawford, Mary Hagerott Crawford, Jung Han, Jung Han, Weng W. Chow, Weng W. Chow, Michael A. Banas, Michael A. Banas, Jeffrey J. Figiel, Jeffrey J. Figiel, Lei Zhang, Lei Zhang, Randy J. Shul, Randy J. Shul, } "Design and performance of nitride-based UV LEDs", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382842; https://doi.org/10.1117/12.382842
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