17 April 2000 Gain switching of GaInN MQW laser diodes
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Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382817
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
A study of the gain-switching process in GaInN MQW laser diodes is reported. Single peak gain-switched optical pulses with pulse widths less than or equal to 40 ps and optical powers equal to 100 mW are observed when electrical pulses with duration of 800 ps are applied. Sub-nanosecond optical pulses with peak powers in excess of 450 mW are also obtained and degradation mechanisms are analyzed. The transient response characteristics of the laser diodes are studied in both the time and spectral domains.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Claudio Marinelli, Igor Y. Khrushchev, Judy M. Rorison, Richard V. Penty, Ian H. White, T. Takeuchi, Hiroshi Amano, Isamu Akasaki, Y. Kaneko, Satoshi W. Watanabe, Norihide Yamada, Ghulam Hasnain, Richard P. Schneider, Shih-Yuan Wang, and Michael R. T. Tan "Gain switching of GaInN MQW laser diodes", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382817; https://doi.org/10.1117/12.382817
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