17 April 2000 Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications
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Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382825
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
InAs/InAsSb SQW LED's incorporating AlAs0.02Sb0.98 or In0.83Al0.17As electron confining barrier layers are reported. Devices emitting 108 (mu) W and 84 (mu) W at 300 K with QW emission at (lambda) equals 4.1 micrometer and (lambda) equals 4.7 micrometer exhibit quantum efficiencies that are improved by factors of 7 and 3.4 respectively over control samples without the barrier. The operating wavelength of negative luminescent (NL) devices with InAs/In(As,Sb) strained-layer-superlattice (SLS) active regions has been extended to (lambda) equals 6.8 micrometer. NL performance is limited by leakage currents that originate in the n+ contact layer.
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Mark J. Pullin, Xiaobing Li, Joerg Heber, David Gervaux, Christopher C. Phillips, "Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382825; https://doi.org/10.1117/12.382825
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