17 April 2000 Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications
Author Affiliations +
Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382825
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
InAs/InAsSb SQW LED's incorporating AlAs0.02Sb0.98 or In0.83Al0.17As electron confining barrier layers are reported. Devices emitting 108 (mu) W and 84 (mu) W at 300 K with QW emission at (lambda) equals 4.1 micrometer and (lambda) equals 4.7 micrometer exhibit quantum efficiencies that are improved by factors of 7 and 3.4 respectively over control samples without the barrier. The operating wavelength of negative luminescent (NL) devices with InAs/In(As,Sb) strained-layer-superlattice (SLS) active regions has been extended to (lambda) equals 6.8 micrometer. NL performance is limited by leakage currents that originate in the n+ contact layer.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark J. Pullin, Mark J. Pullin, Xiaobing Li, Xiaobing Li, Joerg Heber, Joerg Heber, David Gervaux, David Gervaux, Christopher C. Phillips, Christopher C. Phillips, } "Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382825; https://doi.org/10.1117/12.382825
PROCEEDINGS
10 PAGES


SHARE
Back to Top