17 April 2000 Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents
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Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382832
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LEDs) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanism agree very well with the back-to-back tunneling diodes. The kink phenomena were observed in the MSM current- voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan-Kuin Su, Yan-Kuin Su, Wen Ray Chen, Wen Ray Chen, Shoou-Jinn Chang, Shoou-Jinn Chang, Fuh-Shyang Juang, Fuh-Shyang Juang, W. H. Lan, W. H. Lan, Alpha C.H. Lin, Alpha C.H. Lin, Horng Chang, Horng Chang, } "Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382832; https://doi.org/10.1117/12.382832
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