17 April 2000 Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes
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Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382826
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Native Oxide AlAs layer were employed to block the current injection from the top anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide. AlAs layer sandwiched 5 micrometer AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degree Celsius and room temperature. Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guohong Wang, Guohong Wang, Xiaoyu Ma, Xiaoyu Ma, Yufang Zhang, Yufang Zhang, Shutang Wang, Shutang Wang, Yuzhang Li, Yuzhang Li, Lianhui Chen, Lianhui Chen, } "Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382826; https://doi.org/10.1117/12.382826
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