Translator Disclaimer
Paper
17 April 2000 Novel processing for improving optical property of InGaN/GaN MQW light-emitting diode
Author Affiliations +
Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382821
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The optical property and microstructure of InGaN/GaN MQW before and after annealed has been investigated by using photoluminescence (PL) and Transmission Electron Microscope (TEM) technique. The photoluminescence intensity of InGaN/GaN MQW LED annealed within AlN powder can be enhanced by 5 times compared with the as-grown one. The diffused Al converted the InGaN/GaN into AlGaN/InGaN. Less dislocation density in the annealed film and more carrier collection ability due to the band gap difference between InGaN/GaN and InGaN/AlGaN can be applied to explain the astonished result. This simple process can improve the optical property of GaN/InGaN QW LED without spending heavy cost in thin film growth.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. H. Hwang, Kuang-Yu Hsieh, H. S. Huang, and Li-Wei Tu "Novel processing for improving optical property of InGaN/GaN MQW light-emitting diode", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382821
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top