Optical properties of AlN/sapphire grown at high and low temperatures studied by variable angle spectroscopic ellipsometry and micro Raman scattering

Chunhui Yan; H. Walter Yao; Amber C. Abare; Steven P. DenBaars; Jody J. Klaassen; M. F. Rosamond; Peter P. Chow; John M. Zavada

doi:10.1117/12.382820

17 April 2000 Optical properties of AlN/sapphire grown at high and low temperatures studied by variable angle spectroscopic ellipsometry and micro Raman scattering

Chunhui Yan, H. Walter Yao, Amber C. Abare, Steven P. DenBaars, Jody J. Klaassen, M. F. Rosamond, Peter P. Chow, John M. Zavada

Author Affiliations +

Proceedings Volume 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV; (2000) https://doi.org/10.1117/12.382820
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Variable angle spectroscopic ellipsometry (VASE) and micro Raman scattering have been employed to study the optical anisotropy and optical constants of AlN films grown at high and low temperature (HT and LT). The AlN films were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) on c-plane sapphire ((alpha) -Al₂O₃) substrates, respectively. Anisotropic optical phonon spectra of AlN have been measured along two directions so that the optical axis <c> of AlN is either perpendicular or parallel to the polarization of the incident beam. Nonzero off-diagonal elements A_ps and A_sp of Jones matrix in the reflection VASE (RVASE) measurements indicate that the <c> of AlN is slightly away from surface normal due to substrate miscut. The ordinary optical constants of both HT AlN have been determined spectroscopic ellipsometry at small angles of incidence so that the extraordinary response is greatly reduced. The film thickness along with the surface overlayer was determined via the VASE data analysis as well.

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Chunhui Yan, H. Walter Yao, Amber C. Abare, Steven P. DenBaars, Jody J. Klaassen, M. F. Rosamond, Peter P. Chow, and John M. Zavada "Optical properties of AlN/sapphire grown at high and low temperatures studied by variable angle spectroscopic ellipsometry and micro Raman scattering", Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); https://doi.org/10.1117/12.382820

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