Manual Alignment Results Using The Perkin-Elmer M341 And Electron-Beam Masks

Alex Wat; Kong-Chen Chen

doi:10.1117/12.935122

7 November 1983 Manual Alignment Results Using The Perkin-Elmer M341 And Electron-Beam Masks

Alex Wat, Kong-Chen Chen

Proceedings Volume 0394, Optical Microlithography II: Technology for the 1980s; (1983) https://doi.org/10.1117/12.935122
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

Manual alignment data had been collected for the new Perkin-Elmer M341 in a pilot line operation. The alignment data were measured by using an electrical test structure which was incorporated in an E-beam mask set, together with a product device, to monitor the alignment between two critical mask layers. The results were the actual overall misalignment data on devices which were processed in a typical semiconductor IC fabrication environment. A new analytical method was used to analyze the alignment data to identify the contribution from translation, rotation, expansion, scan, or cross-scan components. The contribution from the E-beam masks was also analyzed.

Citation Download Citation

Alex Wat and Kong-Chen Chen "Manual Alignment Results Using The Perkin-Elmer M341 And Electron-Beam Masks", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935122

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