Paper
7 November 1983 Printing Sub-Micron Features Beyond The Normal Ootical Resolution Limit Using A Multi-Level Resist Technique
A Marsh
Author Affiliations +
Abstract
Sidewall erosion in plasma etching is employed to obtain sub-micron features derived from 1.5 to gum sized features which are printed in a standard scanning UV projector. The smallest features reliably obtained are 0.3μm wide.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A Marsh "Printing Sub-Micron Features Beyond The Normal Ootical Resolution Limit Using A Multi-Level Resist Technique", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935118
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KEYWORDS
Etching

Photomasks

Ultraviolet radiation

Projection systems

Semiconducting wafers

Photoresist materials

Silicon

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