28 March 2000 Femtosecond pump-probe and four-wave mixing studies of excitons in GaN
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Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381469
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Femtosecond pump-probe (P-P) and four-wave mixing (FWM) experiments were performed simultaneously at 11 K on gallium nitride epilayers to study the initial temporal line-shapes of the exciton. A-B exciton beats were found in both P-P and FWM experiments near the exciton resonance. However, the differential reflection spectra showed a much slower rise time that persisted at longer negative time delay than the FWM signal or differential transition spectra at the exciton resonance. A numerical solution of a six band semiconductor Bloch equation model including all Hartree Fock nonlinearities shows that this slow rise results from excitation induced dephasing, that is, the strong density dependence of the dephasing time which changes with the laser excitation energy.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young-Dahl Jho, Young-Dahl Jho, Dai-sik Kim, Dai-sik Kim, Arthur J. Fischer, Arthur J. Fischer, Jin-Joo Song, Jin-Joo Song, J. Kenrow, J. Kenrow, K. El Sayed, K. El Sayed, Christopher J. Stanton, Christopher J. Stanton, } "Femtosecond pump-probe and four-wave mixing studies of excitons in GaN", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381469; https://doi.org/10.1117/12.381469
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