28 March 2000 Femtosecond spectroscopy in doped GaN
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Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381464
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
A hot carrier relaxation dynamics are studied in both n-type and p-type GaN films grown on sapphire by molecular beam epitaxy. A novel femtosecond pump-probe technique is used in which the carriers are excited by an infrared pump and the carrier dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed in both samples. The electron dynamics are fitted by a model in which the LO-phonon emission is the dominant energy relaxation process. The hole dynamics also have been discussed and compared to the electron dynamics. Hot phonon effects seem play a major role to reduce the effective strength of the carrier-LO phonon scattering rate in both cases.
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Hong Ye, Hong Ye, Gary W. Wicks, Gary W. Wicks, Philippe M. Fauchet, Philippe M. Fauchet, } "Femtosecond spectroscopy in doped GaN", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381464; https://doi.org/10.1117/12.381464
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