28 March 2000 Intersubband-transition-induced interband two-photon absorption by femtosecond optical excitation
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Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381470
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
We report the near-infrared intersubband absorption characteristics in In (formula available in paper) heterostructures lattice matched in InP substrate. We have investigated for the first time the excitation power dependence of the intersubband transitions in Sb based quantum wells using a femtosecond optical parametric amplifier tuned over wavelength ranging from 1.8 micrometers - 2.4 micrometers . The bandgap of the InGaAs material system in the regime of 1.0 eV facilitates nonlinear interband optical absorption effects in the presence of strong near-infrared intersubband resonant optical excitation. We have observed a novel nonlinear optical phenomenon,- an intersubband transition induced interband absorption due to the two- photon interband excitation after the onset of the intersubband absorption saturation. The excitation wavelength-dependence of the absorption saturation characteristics has also been studied. The absorption saturation measurements have been performed in quantum wells with various well widths.
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Arup Neogi, Arup Neogi, Haruhiko Yoshida, Haruhiko Yoshida, Teruo Mozume, Teruo Mozume, Nikolai Georgiev, Nikolai Georgiev, Tomoyuki Akiyama, Tomoyuki Akiyama, Osamu Wada, Osamu Wada, "Intersubband-transition-induced interband two-photon absorption by femtosecond optical excitation", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381470; https://doi.org/10.1117/12.381470

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