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28 March 2000 Monte Carlo studies of the electron-phonon interactions in AlGaAs
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Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381463
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Experimental Raman spectroscopy studies, performed by two different groups, to measure the relative strength of the polar modes in AlxGa1-xAs differed in that one showed a linear behavior with the Al concentration while the other showed a non-monotonic behavior. We have used an ensemble Monte Carlo code to study this system. It is found that the excitation energy and the electron concentration all contribute to the experimental discrepancies, while the excitation pulse width had little effect on the measured relative strength of the Al-mode. Apparently the relative strength of the Al-mode scattering is density dependent for x >= 0.25.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lucian A. Shifren and David K. Ferry "Monte Carlo studies of the electron-phonon interactions in AlGaAs", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); https://doi.org/10.1117/12.381463
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