Nonlinear optics of semiconductors near the half band gap

Jin Ung Kang; Alain Villeneuve; J. Stewart Aitchison; George I. Stegeman

doi:10.1117/12.381474

28 March 2000 Nonlinear optics of semiconductors near the half band gap

Jin Ung Kang, Alain Villeneuve, J. Stewart Aitchison, George I. Stegeman

Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381474
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Semiconductors below the half band gap exhibit higher bond- electronic, off-resonant nonlinearities compare to silica fibers. They also exhibit low scattering losses, negligible two-photon absorption, and no linear absorption. Furthermore, due to the mature fabrication technology many complicated device designs can be easily fabricated. Thus, this material system offers unique opportunity to observe and test novel nonlinear phenomena and devices. In this paper, we will review the nonlinear optical properties of AlGaAs waveguides near the half band gap.

Citation Download Citation

Jin Ung Kang, Alain Villeneuve, J. Stewart Aitchison, and George I. Stegeman "Nonlinear optics of semiconductors near the half band gap", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); https://doi.org/10.1117/12.381474

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