28 March 2000 Subpicosecond time-resolved Raman studies of ballistic electron transport in InP
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Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381467
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Electron ballistic transport and in a InP-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T equals 300 K. The time-evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n is congruent to 5 X 1016 cm-3, electrons travel quasi- ballistically--electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.
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Kong-Thon F. Tsen, Kong-Thon F. Tsen, David K. Ferry, David K. Ferry, Jyh-Shyang Wang, Jyh-Shyang Wang, Chao-Hsiung Huang, Chao-Hsiung Huang, Hao-Hsiung Lin, Hao-Hsiung Lin, } "Subpicosecond time-resolved Raman studies of ballistic electron transport in InP", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381467; https://doi.org/10.1117/12.381467
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