13 April 2000 Effect of impurity concentration on 1.54 um emission from GaN:Er
Author Affiliations +
Proceedings Volume 3942, Rare-Earth-Doped Materials and Devices IV; (2000) https://doi.org/10.1117/12.382882
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
The surface morphology and the room temperature 1.54 micrometers photoluminescence (PL) intensity have been investigated as a function of Er flux in GaN:Er grown by gas source molecular beam epitaxy using below bandgap excitation energy. Unlike AlN, GaN:Er showed improved surface smoothness as evidenced by atomic force microscopy and scanning electron microscopy, with RMS roughness values improving from 18.1 to 2.0 nm as the Er concentration is increased. Similarly the PL emission increased with increasing Er concentration and showed no evidence of saturation or concentration quenching. Even further improvements in 1.54 micrometers PL intensity from GaN:Er have been obtained through the introduction via ion implantation of carbon or oxygen, with carbon appearing to produce the greatest increase. Increasing the C concentration through the use of CBr4 during growth initially improved the surface smoothness, with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cammy R. Abernathy, Cammy R. Abernathy, Mark J. Overberg, Mark J. Overberg, John Devin Mackenzie, John Devin Mackenzie, Uwe Hoemmerich, Uwe Hoemmerich, Stephen J. Pearton, Stephen J. Pearton, R. G. Wilson, R. G. Wilson, John M. Zavada, John M. Zavada, "Effect of impurity concentration on 1.54 um emission from GaN:Er", Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); doi: 10.1117/12.382882; https://doi.org/10.1117/12.382882

Back to Top