13 April 2000 Room-temperature electroluminescence from erbium-doped porous silicon composites for infrared LED applications
Author Affiliations +
Proceedings Volume 3942, Rare-Earth-Doped Materials and Devices IV; (2000) https://doi.org/10.1117/12.382845
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The nanostructured matrix of porous silicon makes the material an ideal host for erbium because its very large surface area allows easy infiltration of the ions into the matrix and it readily oxidizes obtaining large concentrations of oxygen necessary for erbium emission. Erbium is infiltrated in the pores (<EQ 10-19 cm-3) by cathodic electrochemical migration of the ions followed by high temperature annealing (950 - 1100 degree(s)C). Electrochemical doping of porous silicon by erbium is simpler and of lower cost when compared to conventional techniques like ion implantation, epitaxial growth, and chemical vapor deposition used to fabricate erbium-doped c-Si structures. We demonstrate stable room- temperature electroluminescence at 1.54 micrometers from erbium- doped porous silicon devices under both forward and reverse bias conditions.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Herman A. Lopez, Philippe M. Fauchet, "Room-temperature electroluminescence from erbium-doped porous silicon composites for infrared LED applications", Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); doi: 10.1117/12.382845; https://doi.org/10.1117/12.382845
PROCEEDINGS
10 PAGES


SHARE
Back to Top