2 May 2000 Comparison of vanadium-dioxide films produced via sol-gel and sputtering techniques
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Proceedings Volume 3943, Sol-Gel Optics V; (2000) https://doi.org/10.1117/12.384349
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
The purpose of this work is to compare thin films of vanadium dioxide (VO2) produced via a sol-gel process and a reactive sputtering technique. The sol-gel process used was based on vanadium oxide triisopropoxide precursor. This was converted to soli n dried ethanol by adding water, and the substrates were then dip coated with a controlled draw method in an inert atmosphere. After drying this was followed by a final reduction stage in a low oxygen partial pressure atmosphere. The reactive sputtering technique used carefully controlled deposition rates from a vanadium metal target in argon/oxygen atmosphere to ensure correct stoichiometry. The films were deposited on silicon substrates and were tested optically and electrically above the below the transition temperature. Results of transmission and reflectivity in the IR region of the spectrum, and electrical conductivity are presented. The results show that the sol-gel technique provides a viable alternative method to sputtering for the production of thin films of vanadium dioxide.
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Roy E. Walker, Roy E. Walker, John A. Coath, John A. Coath, Mark A. Richardson, Mark A. Richardson, } "Comparison of vanadium-dioxide films produced via sol-gel and sputtering techniques", Proc. SPIE 3943, Sol-Gel Optics V, (2 May 2000); doi: 10.1117/12.384349; https://doi.org/10.1117/12.384349

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