2 May 2000 Processing and optical properties of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides
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Proceedings Volume 3943, Sol-Gel Optics V; (2000) https://doi.org/10.1117/12.384355
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We report here the processing and optical characterization of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides deposited on SOS substrates by the sol-gel route combined with spin-coating and rapid thermal annealing. The recipes used for preparing the solutions by sol-gel route are in mole ratio of 93SiO2:20AlO1.5: x ErO1.5. In order to verify the residual OH content in the films, FTIR spectra were measured and the morphology of the material by the XRD analysis. Five 2-layer films annealed at a maximum temperature of 500 degrees C, 700 degrees C, 900 degrees, 1000 degrees C, 1100 degrees C respectively were fabricated on silicon. The FTIR and XRD curves show that annealing at 1050 degrees C for 15s effectively removes the OH in the materia and keeps the material amorphous. The propagation loss of the planar waveguides was measured by using the method based on scattering in measurements and the result was obtained to be 1.54dB/cm. The fluorescence spectra were measured with 514nm wavelength of Ar+ laser by directly shining the pump beam on the film instead of prism coupling. The results show that the 1 mole Nd3+ content recipe has the strongest emission efficiency among the four samples investigated.
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Qing Xiang, Qing Xiang, Yan Zhou, Yan Zhou, Boon Siew Ooi, Boon Siew Ooi, Yee Loy Lam, Yee Loy Lam, Yuen Chuen Chan, Yuen Chuen Chan, Chan Hin Kam, Chan Hin Kam, } "Processing and optical properties of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides", Proc. SPIE 3943, Sol-Gel Optics V, (2 May 2000); doi: 10.1117/12.384355; https://doi.org/10.1117/12.384355
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