2 May 2000 Room-temperature persistent spectral hole burning of rare-earth-ion-doped glasses prepared by sol-gel process
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Proceedings Volume 3943, Sol-Gel Optics V; (2000) https://doi.org/10.1117/12.384329
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Room temperature persistent spectral hole burning (PSHB) was observed in Sm2+ and Eu3+-doped Al2O3- SiO2 glasses prepared by a sol-gel method. The glasses were obtained by heating the gels in hydrogen gas and the spectral hole was burned in the excitation spectrum of the 7F0 yields 5D0 transition of the Sm2+ and Eu3+ ions. The depth of the hole burned at 77 K decreased with increasing the cycling temperature. The decrease in the hole-depth is due to the thermal relaxation of the burnt-state of OH bonds surrounding the rare-earth ions. The depth of hole burned in the Sm2+-doped glass heated in 20 percent H2-80 percent N2 gas exhibited the PSHB at room temperature. We considered that the electron transfer between the rare-earth ions and the Al-related defect centers acts for hole burning.
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Masayuki Nogami, Tomokatsu Hayakawa, Tomotaka Ishikawa, Takehito Nagakura, Toshihiro Kasuga, "Room-temperature persistent spectral hole burning of rare-earth-ion-doped glasses prepared by sol-gel process", Proc. SPIE 3943, Sol-Gel Optics V, (2 May 2000); doi: 10.1117/12.384329; https://doi.org/10.1117/12.384329
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