Group-III Nitride Lasers
Proc. SPIE 3944, Nitride-based lasers: advances in cavity design, 0000 (14 July 2000); doi: 10.1117/12.391400
Proc. SPIE 3944, Group-III nitride VCSEL structures grown by molecular beam epitaxy, 0000 (14 July 2000); doi: 10.1117/12.391418
Proc. SPIE 3944, Simulation and optimization of 420-nm InGaN/GaN laser diodes, 0000 (14 July 2000); doi: 10.1117/12.391430
Proc. SPIE 3944, Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation, 0000 (14 July 2000); doi: 10.1117/12.391440
Physics of Group-III Nitride Materials
Proc. SPIE 3944, Internal electric fields in nitride-based heterostructures, 0000 (14 July 2000); doi: 10.1117/12.391450
Proc. SPIE 3944, Effect of nitrogen on the band structure of III-N-V alloys, 0000 (14 July 2000); doi: 10.1117/12.391460
Proc. SPIE 3944, Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs, 0000 (14 July 2000); doi: 10.1117/12.391479
Group-III Nitride Devices
Proc. SPIE 3944, Modeling of gallium nitride optoelectronic devices, 0000 (14 July 2000); doi: 10.1117/12.391401
Proc. SPIE 3944, GaInNAs laser gain, 0000 (14 July 2000); doi: 10.1117/12.391408
Proc. SPIE 3944, Modeling of pnpn GaN and 6H-SiC thyristors, 0000 (14 July 2000); doi: 10.1117/12.391412
Quantum Well Intermixing
Proc. SPIE 3944, Quantum well intermixing for photonic applications, 0000 (14 July 2000); doi: 10.1117/12.391413
Proc. SPIE 3944, Theoretical analysis of AlGaAs/GaAs quantum well waveguide defined by impurity-free vacancy diffusion, 0000 (14 July 2000); doi: 10.1117/12.391414
Proc. SPIE 3944, Theoretical studies of AlGaAs-GaAs multiple-quantum-well single-channel waveguide defined by ion-implantation-induced intermixing, 0000 (14 July 2000); doi: 10.1117/12.391415
Quantum Well Physics
Proc. SPIE 3944, Polariton propagation and additional boundary conditions, 0000 (14 July 2000); doi: 10.1117/12.391416
Proc. SPIE 3944, Dimensional characteristics of low-dimensional structures, 0000 (14 July 2000); doi: 10.1117/12.391417
Proc. SPIE 3944, Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers, 0000 (14 July 2000); doi: 10.1117/12.391419
Physics of Semiconductor Lasers
Proc. SPIE 3944, Microscopic theory of semiconductor light emission, 0000 (14 July 2000); doi: 10.1117/12.391421
Proc. SPIE 3944, Measurement of optical gain and Fermi level separation in semiconductor structures, 0000 (14 July 2000); doi: 10.1117/12.391422
Proc. SPIE 3944, Analysis of the mechanisms for impaired high-temperature high-speed performance of 1.3-um InGaAsP lasers, 0000 (14 July 2000); doi: 10.1117/12.391423
Proc. SPIE 3944, Experimental demonstration of a semiconductor pump-probe laser system, 0000 (14 July 2000); doi: 10.1117/12.391424
Microcavity Physics and Vertical-Cavity Surface-Emitting Lasers
Proc. SPIE 3944, Cavity solitons in semiconductor devices, 0000 (14 July 2000); doi: 10.1117/12.391425
Proc. SPIE 3944, Combined effects of semiconductor gain dynamics, spin dynamics, and thermal shift in polarization selection in VCSELs, 0000 (14 July 2000); doi: 10.1117/12.391426
Proc. SPIE 3944, Optical physics of VCSEL tapered oxide apertures, 0000 (14 July 2000); doi: 10.1117/12.391427
Proc. SPIE 3944, Simulation of spontaneous emission in apertured microcavities, 0000 (14 July 2000); doi: 10.1117/12.391428
Proc. SPIE 3944, Microscopical model for polarization stability in optically anisotropic VCSELs, 0000 (14 July 2000); doi: 10.1117/12.391429
Proc. SPIE 3944, Transverse mode dynamics of VCSELs undergoing current modulation, 0000 (14 July 2000); doi: 10.1117/12.391431
Semiconductor Laser Simulation
Proc. SPIE 3944, Modeling semiconductor lasers: simulation of devices based on microscopic physics, 0000 (14 July 2000); doi: 10.1117/12.391432
Proc. SPIE 3944, Modeling combined effects of carrier injection, photon dynamics, and heating in strained multiple-quantum-well lasers, 0000 (14 July 2000); doi: 10.1117/12.391433
Proc. SPIE 3944, Many-body effects on bandgap shrinkage, effective masses, and alpha factor, 0000 (14 July 2000); doi: 10.1117/12.391434
Proc. SPIE 3944, Modeling of the static behavior in two InGaAsP laterally coupled semiconductor diode lasers, 0000 (14 July 2000); doi: 10.1117/12.391435
Quantum Cascade Lasers and Intersubband Transitions
Proc. SPIE 3944, Quantum cascade lasers: between intersubband physics and applications, 0000 (14 July 2000); doi: 10.1117/12.391436
Proc. SPIE 3944, Recent advances in type-II interband cascade lasers, 0000 (14 July 2000); doi: 10.1117/12.391437
Proc. SPIE 3944, Modeling of mid-IR type-II interband cascade lasers, 0000 (14 July 2000); doi: 10.1117/12.391438
Proc. SPIE 3944, Optical control of intersubband absorption in a multiple-quantum-well-embedded semiconductor microcavity, 0000 (14 July 2000); doi: 10.1117/12.391439
High-Power Semiconductor Lasers and Amplifiers
Proc. SPIE 3944, Optimization of high-power broad-area semiconductor lasers, 0000 (14 July 2000); doi: 10.1117/12.391441
Proc. SPIE 3944, Toward filament-free semiconductor lasers, 0000 (14 July 2000); doi: 10.1117/12.391442
Proc. SPIE 3944, Transverse waveguide design for high-brightness laser diodes, 0000 (14 July 2000); doi: 10.1117/12.391443
Proc. SPIE 3944, Modeling of the performance of high-brightness tapered lasers, 0000 (14 July 2000); doi: 10.1117/12.391444
Wafer Characterization and Crystal Growth Modeling
Proc. SPIE 3944, Nondestructive room-temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and surface photovoltage spectroscopy, 0000 (14 July 2000); doi: 10.1117/12.391445
Proc. SPIE 3944, Modeling commercial MOCVD reactors: role of complex chemistry models, 0000 (14 July 2000); doi: 10.1117/12.391446
Proc. SPIE 3944, Neural network modeling of growth processes, 0000 (14 July 2000); doi: 10.1117/12.391447
Nonlinear Dynamics in Semiconductor Lasers
Proc. SPIE 3944, Excitability in semiconductor lasers, 0000 (14 July 2000); doi: 10.1117/12.391448
Proc. SPIE 3944, Excitability and coherence resonance in passively Q-switched diode lasers, 0000 (14 July 2000); doi: 10.1117/12.391449
Proc. SPIE 3944, Intensity dropout events in directly modulated laser diodes, 0000 (14 July 2000); doi: 10.1117/12.391451
Proc. SPIE 3944, Effect of chirping on optical bistability in A/4-shifted semiconductor distributed feedback structures, 0000 (14 July 2000); doi: 10.1117/12.391452
Charge Carrier Transport in Semiconductor Lasers and Amplifiers
Proc. SPIE 3944, Time-resolved visualization of electron flow in semiconductor quantum confined structures using carrier drag effect, 0000 (14 July 2000); doi: 10.1117/12.391453
Proc. SPIE 3944, Simulation of carrier dynamics in multiple-quantum-well lasers, 0000 (14 July 2000); doi: 10.1117/12.391454
Proc. SPIE 3944, Circuit modeling of carrier transport effects in SCHQW bistable lasers, 0000 (14 July 2000); doi: 10.1117/12.391455
Proc. SPIE 3944, Investigating nonlinear transport effects in GaAs using electro-optic probing, 0000 (14 July 2000); doi: 10.1117/12.391456
Nonlinear Dynamics in Semiconductor Lasers with Optical Feedback
Proc. SPIE 3944, Dynamics of DFB lasers subject to optical feedback: stability properties of the stable modes, 0000 (14 July 2000); doi: 10.1117/12.391457
Proc. SPIE 3944, All-optical technique for stabilization of an external cavity laser diode: numerical and experimental demonstrations, 0000 (14 July 2000); doi: 10.1117/12.391458
Proc. SPIE 3944, Optical feedback effects observed in the onset of the period-doubling bifurcation of modulated laser diode, 0000 (14 July 2000); doi: 10.1117/12.391459
Proc. SPIE 3944, Tailoring the dynamics of diode lasers by passive dispersive reflectors, 0000 (14 July 2000); doi: 10.1117/12.391461
Photonic Devices and Systems
Proc. SPIE 3944, Numerical methods for modeling photonic devices and systems, 0000 (14 July 2000); doi: 10.1117/12.391462
Proc. SPIE 3944, Optical devices integrated with semiconductor optical amplifier, 0000 (14 July 2000); doi: 10.1117/12.391463
Proc. SPIE 3944, Noise analysis of gain-clamped and conventional semiconductor optical amplifiers, 0000 (14 July 2000); doi: 10.1117/12.391464