14 July 2000 Analysis of the mechanisms for impaired high-temperature high-speed performance of 1.3-μm InGaAsP lasers
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391423
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 micrometer InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 degrees Celsius to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modeling is found to accurately predict the trend of threshold currents over temperature. Using gain modeling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 degrees Celsius indicate a reduction in RIN frequency to 63% of the 25 degree Celsius value which matches well with experimental small signal performance.
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Aeneas B. Massara, Kevin A. Williams, Jennifer L. Yong, Alexander I. Onischenko, Judy M. Rorison, Richard V. Penty, Ian H. White, Andrew Galbraith, Paul Crump, Mark Silver, "Analysis of the mechanisms for impaired high-temperature high-speed performance of 1.3-μm InGaAsP lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391423; https://doi.org/10.1117/12.391423
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