14 July 2000 Carrier cooling effects on the saturation characteristics of quantum well absorbers
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391405
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The effects of carrier cooling on the saturation characteristics of quantum well absorbers are theoretically investigated. A comprehensive many-body model is employed, and both excitonic effects and bandgap renormalization are shown to play a significant role. The detailed interplay between band-filling and many-body effects at low carrier temperatures is shown to lead to saturation characteristics that are highly spectrally dependent, and that cannot in general be identified by a linear saturation characteristic. In addition, a spectral regime of enhanced fast saturation is identified at or slightly below the exciton peak energy, which may provide a mechanism for previously observed mode-locking behavior.
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Mark P. Mullane, Mark P. Mullane, Alexander V. Uskov, Alexander V. Uskov, John Gerard McInerney, John Gerard McInerney, } "Carrier cooling effects on the saturation characteristics of quantum well absorbers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391405; https://doi.org/10.1117/12.391405
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