Circuit modeling of carrier transport effects in SCHQW bistable lasers

M. Ganesh Madhan; P. R. Vaya; N. Gunasekaran

doi:10.1117/12.391455

14 July 2000 Circuit modeling of carrier transport effects in SCHQW bistable lasers

M. Ganesh Madhan, P. R. Vaya, N. Gunasekaran

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391455
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

An electrical equivalent circuit for quantum well absorptive bistable laser diode has been developed from rate equations. The carrier transport effects are studied by simulating the circuit for dc sweep and transient conditions using circuit simulator Pspice. The hysterisis width is found to vary nonlinearly for lower values of transport time and linearly for higher values. The turn on delay increases with transport time in transient operation.

Citation Download Citation

M. Ganesh Madhan, P. R. Vaya, and N. Gunasekaran "Circuit modeling of carrier transport effects in SCHQW bistable lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391455

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