14 July 2000 Combined effects of semiconductor gain dynamics, spin dynamics, and thermal shift in polarization selection in VCSELs
Author Affiliations +
Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391426
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We discuss mechanisms of polarization switching (PS) in Vertical Cavity Surface Emitting Lasers (VCSELs) within a mesoscopic approach based on an explicit form of a frequency- dependent complex susceptibility of the QW semi-conductor material. Cavity anisotropies, spin carrier dynamics and thermal shift of the gain curve are also taken into account in this framework. For large birefringence we find a PS due to thermal shift. For small birefringence we find a different PS, from the high-gain to the low-gain polarization state, that occurs at constant temperature. We characterize polarization partition noise in terms of power spectra. Transverse effects for PS in gain guided VCSELs are also considered.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maxi San Miguel, Salvador Balle, Josep Mulet, Claudio R. Mirasso, E. Tolkachova, Jorge R. Tredicce, "Combined effects of semiconductor gain dynamics, spin dynamics, and thermal shift in polarization selection in VCSELs", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391426; https://doi.org/10.1117/12.391426
PROCEEDINGS
10 PAGES


SHARE
Back to Top