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14 July 2000 Dimensional characteristics of low-dimensional structures
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391417
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The purpose of this paper is to examine the dimensional aspects of the optical properties of quantum well and dot systems, without assuming that the carriers are localized to the geometrical extent of the confining potential. We show that optical absorption normal to the plane of a well cannot be expressed as an absorption coefficient but should be specified as a fraction of light transmitted or absorbed per well. The modal gain for light propagating along the plane of a well does not scale with well width and the variation of the material gain inversely proportional to the well width is a consequence of the definition of the confinement factor and has no independent physical significance. Optical absorption by quantum dots should be expressed as a cross section per dot. The radiative recombination rate is correctly expressed in terms of a 2D recombination coefficient and use of an equivalent 3D coefficient introduces an artificial dependence on well width which can lead to errors in the comparison of quantum well systems.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Blood "Dimensional characteristics of low-dimensional structures", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391417
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