14 July 2000 Effect of microwave loss and device length on the linear characteristics of traveling-wave coplanar-waveguide electroabsorption modulator
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391404
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We study the effects of microwave loss and device length on the nonlinear characteristics of intensity modulation response in 1.55 micrometer traveling-wave coplanar waveguide InGaAsP bulk electro-absorption modulator. By using device length segmentation scheme optical transmission curve reflecting the change of the electro-absorption effects at each segmented position due to the microwave loss is obtained, and then the intermodulation distortion and spurious free dynamic range characteristics of RF signal are analyzed. Device length decreases Vb3, which is the bias voltage minimizing the third order and increases the third order intermodulation distortion (IMD3). On the other hand, microwave loss increases Vb3, and reduces IMD3.
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Soon-Chel Kong, Jeong-Hoon Lee, Seung-Jin Lee, Won-Sun Cho, Youn Sub Lim, Young-Wan Choi, "Effect of microwave loss and device length on the linear characteristics of traveling-wave coplanar-waveguide electroabsorption modulator", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391404; https://doi.org/10.1117/12.391404
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