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14 July 2000 Effect of nitrogen on the band structure of III-N-V alloys
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391460
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Incorporation of a few percent of nitrogen into conventional III-V compounds to form III-N-V alloys such as GaNAs and GaNP leads to a large reduction of the fundamental band gap. We show experimentally and theoretically that the effect originates from an anti-crossing interaction between the extended conduction-band states and a narrow resonant band formed by localized N states. The interaction significantly alters the electronic band structure by splitting the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Shan, Wladek Walukiewicz, K. M. Yu, Joel W. Ager III, Eugene E. Haller, John F. Geisz, Daniel J. Friedman, J. M. Olson, Sarah R. Kurtz, H. P. Xin, and Charles W. Tu "Effect of nitrogen on the band structure of III-N-V alloys", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391460
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