14 July 2000 Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000); doi: 10.1117/12.391479
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The variation of the value of the linewidth of an excitonic transition in InGaAsN alloys (1% and 2% nitrogen) as a function of hydrostatic pressure using photoluminescence spectroscopy is studied at 4K. The excitonic linewidth increases as a function of pressure until about 100 kbar after which it tends to saturate. This pressure dependent excitonic linewidth is used to derive the pressure variation of the exciton reduced mass using a theoretical formalism based on the premise that the broadening of the excitonic transition is caused primarily by compositional fluctuations in a completely disordered alloy. The linewidth derived ambient pressure masses are compared and found to be in agreement with other mass measurements. The variation of this derived mass is compared with the results from a nearly first-principles approach in which calculations based on the local density approximation to the Kohn-Sham density functional theory are corrected using a small amount of experimental input.
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Eric D. Jones, Andrew A. Allerman, Steven R. Kurtz, Ian J. Fritz, Normand A. Modine, Robert M. Sieg, Krishan K. Bajaj, Stanley T. Tozer, Xing Wei, "Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391479; https://doi.org/10.1117/12.391479
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KEYWORDS
Nitrogen

Excitons

Gallium arsenide

Eye

Luminescence

Semiconductors

Diamond

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