GaInNAs laser gain

Weng W. Chow; Eric D. Jones; Normand A. Modine; Steven R. Kurtz; Andrew A. Allerman

doi:10.1117/12.391408

14 July 2000 GaInNAs laser gain

Weng W. Chow, Eric D. Jones, Normand A. Modine, Steven R. Kurtz, Andrew A. Allerman

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391408
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

Citation Download Citation

Weng W. Chow, Eric D. Jones, Normand A. Modine, Steven R. Kurtz, and Andrew A. Allerman "GaInNAs laser gain", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391408

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