Paper
14 July 2000 Highly reflective Bragg mirrors for VCSEL applications at 1.3 and 1.55μm
Maria Linnik, Aristos Christou
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Abstract
Quaternary semiconductor alloy material systems for applications as highly efficient Distributed Bragg Reflectors were investigated for two operating wavelengths of 1.3 and 1.55 micrometer. Based on the calculations of the material's energy bandgaps and indices of refraction for the entire composition range and for the corresponding incident wavelength, four quaternary alloys have been selected from which the refractive index difference between two adjacent layers of 0.65 has been obtained. All quaternary alloys were lattice matched to InP substrate. The reflectivity calculations show that for the DBR with a large index of refraction contrast, 16 pairs of layers would result in a reflectivity of 99%. The resulting monolithic VCSEL structure would consist of fewer DBR layers, interface roughness would be reduced, and, therefore, reliability of the device would be improved.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maria Linnik and Aristos Christou "Highly reflective Bragg mirrors for VCSEL applications at 1.3 and 1.55μm", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391495
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KEYWORDS
Reflectivity

Refractive index

Mirrors

Vertical cavity surface emitting lasers

Semiconductors

Interfaces

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