14 July 2000 Hot electron GaInAsP/InP surface emitter
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391496
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The GaInAsP/InP device described in this work consists of an InP p-n junction with a GaInAsP quantum well placed on the n- side within the depletion region. This device is designed for 1.5 micrometer emission. Light emission is independent of the applied voltage polarity, and the device acts as an XOR optical logic gate. One potential application for this device is as a low cost VCSEL for optical access networks, since two diffused-in point contacts are used for longitudinal biasing. Hence, the current is injected directly into the active region without having to pass through the Distributed Bragg Reflectors (DBRs). Experimental results concerning the temperature dependence of photoluminescence and electroluminescence spectra, and light field characteristics are compared with model calculations. These include self- consistent numerical one-dimensional solutions of the Poisson and Schrodinger equations. We also studied the emission wavelength as a function of position of the GaInAsP quantum well within the built-in electric field of the InP p-n junction. The calculated overlap of the normalized electron and hole wavefunctions is in good agreement with the experimental results.
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Russell Sceats, Angela Dyson, Adrian Boland-Thoms, Naci Balkan, Michael J. Adams, Chris C. Button, "Hot electron GaInAsP/InP surface emitter", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391496; https://doi.org/10.1117/12.391496
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