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14 July 2000 Infrared photodetectors based on Sb materials
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391483
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Strained layer superlattices based on Sb semiconductor material are proposed for long wavelength photodetector applications. Theoretical studies on the band structure of AlGaSb/GaSb, AlInSb/InSb, and GaInSb/InAs superlattices show that the wavelength coverage can be extended from 0.5 to 30 micrometer. Optical absorptions of the superlattices are calculated taking into account the intermixing effect at different diffusion lengths. Responsivity and detectivity of the GaInSb/InAs superlattice detector are also analyzed. Blue shift of responsivity is observed for increased intermixing and the detectivity D* at 77 K is increased by more than one fold in magnitude as R0A increases linearly with intermixing.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Siew-Wan Lee and E. Herbert Li "Infrared photodetectors based on Sb materials", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391483
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