14 July 2000 Measurement of optical gain and Fermi level separation in semiconductor structures
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391422
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We describe a single-pass technique for the independent measurement of optical modal gain and internal mode loss in semiconductor lasers structures using a single, multi-section device which gives the loss and the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized gain spectra also identifies the transparency point, provides the quasi-Fermi level energy separation and a second means for determination of the mode loss. Measurements are described for AlGaInP quantum well laser structures with emission wavelengths close to 670 nm, yielding an internal loss of 10 cm-1 and peak gain values up to 4000 cm-1 for current densities up to 4 kAcm-2. We have also made an independent measurement of the spontaneous emission spectrum through a top-contact window on the same device structure and have converted this to local gain using the usual thermodynamical relationship. By this means we have been able to confirm the validity of this relation between gain and emission for excited semiconductor structures of this type.
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John D. Thomson, John D. Thomson, Huw D. Summers, Huw D. Summers, P. J. Hulyer, P. J. Hulyer, Peter M. Smowton, Peter M. Smowton, Peter Blood, Peter Blood, } "Measurement of optical gain and Fermi level separation in semiconductor structures", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391422; https://doi.org/10.1117/12.391422
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