14 July 2000 Microwave characteristics of traveling-wave MQW electro-absorption modulators using the FDTD and the Fourier transform
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391481
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We present numerical analysis of traveling-wave (TW) multiple quantum well (MQW) electro-absorption modulator which can be used for wide-band applications, covering DC to 30 GHz or higher frequencies. Considerations in design of TW modulators are microwave characteristics such as, waveguide attenuation and phase velocity matching between guided lightwave and microwave. In this study, we simulate a 1.3 micrometer InGaAs/InGaAsP TW MQW EAM using the 3D Finite Difference-Time Domain method, and investigate frequency dependent parameters by using the Fourier transform for analysis of microwave characteristics in detail. We identify that as the distance between signal and ground electrode increase, the characteristic ridge-type TW EAM change from planar CPW to that of microstrip structure. It is believed that our calculated data provide useful information to optimize and fabricate ridge-type TW CPW EAM.
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Seung-Jin Lee, Seung-Jin Lee, Jeong-Hoon Lee, Jeong-Hoon Lee, Soon-Chel Kong, Soon-Chel Kong, Young-Wan Choi, Young-Wan Choi, } "Microwave characteristics of traveling-wave MQW electro-absorption modulators using the FDTD and the Fourier transform", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391481; https://doi.org/10.1117/12.391481
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