14 July 2000 Modeling combined effects of carrier injection, photon dynamics, and heating in strained multiple-quantum-well lasers
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391433
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
Our simulations on InP-based edge-emitting RW-lasers have been essentially based on the drift-diffusion approach. The model comprises a self-consistent description of the electronic properties and the optical field under modifications caused by heating processes. Calculations on the device performance have been done by means of the semiconductor device simulation package TESCA with energy transport equation. The quantum confined carriers are described by a (8X8) kp-Hamiltonian, self-consistently coupled to the Poisson equation and exchange-correlation potentials to give a guess for Coulomb effects. Using the package KPLIB for band structure calculations, modifications of the optical gain, caused by the presence of the strained multi quantum wells, have been simulated and will be discussed.
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Uwe Bandelow, Herbert Gajewski, Hans-Christoph Kaiser, "Modeling combined effects of carrier injection, photon dynamics, and heating in strained multiple-quantum-well lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391433; https://doi.org/10.1117/12.391433
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