14 July 2000 Modeling of the static behavior in two InGaAsP laterally coupled semiconductor diode lasers
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391435
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
This paper presents our initial work on high speed laterally coupled semiconductor diode lasers, where the structures to be studied will be two laterally coupled semiconductor diode lasers are expected to increase the modulation bandwidth by using the principles of coupling. We will show a study of the modeling used to find the static and spatial behavior of theses devices, obtaining the near and far field profiles and light power-current characteristic. Our primary goal will be to present the static and spatial behavior of the two InGaAsP laterally coupled semiconductor diode lasers using the effective-index method and Beam Propagation Method (BPM). Our results provide the static evolution of the current density profile, carrier density in the active layer and effective index shape at different injection current levels of a specific InGaAsP structure operating at 1.3 micrometer.
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Manuel Leones, Manuel Leones, Horacio Lamela, Horacio Lamela, Jean-Pierre Vilcot, Jean-Pierre Vilcot, A. Idjeri, A. Idjeri, } "Modeling of the static behavior in two InGaAsP laterally coupled semiconductor diode lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391435; https://doi.org/10.1117/12.391435
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