14 July 2000 Modeling semiconductor lasers: simulation of devices based on microscopic physics
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391432
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.
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Jerome V. Moloney, Miroslav Kolesik, Marcelo Matus, Keith J. Kasunic, "Modeling semiconductor lasers: simulation of devices based on microscopic physics", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391432; https://doi.org/10.1117/12.391432
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