14 July 2000 Noise analysis of gain-clamped and conventional semiconductor optical amplifiers
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391464
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Noise in 1550 nm gain-clamped and conventional SOAs is studied using a detailed device model. By dividing the amplifier in M longitudinal sections were are able to account for longitudinal non-uniformity of the carrier density. We use a rate equation for locally averaged values of carriers and photons density for each section, obtaining a highly non- uniform spatial profile of carrier density for a conventional SOA, due to local saturation caused by ASE or signal photons. At least M equals 8 sections are required to accurately model the noise figure. The model is then applied to a DBR-type gain-clamped SOA, whose noise figure is studied as a function of input power and lasing wavelength. We show that changes in the spatial carrier profile caused by the input signal significantly affect the noise figure, even when the gain is constant. A new method for Gain-Clamped SOA noise figure reduction is also proposed, based on unbalanced Bragg reflectors. An improvement of noise figure as large as 2 dB is devised.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guido Giuliani, Guido Giuliani, Davide D'Alessandro, Davide D'Alessandro, Silvano Donati, Silvano Donati, "Noise analysis of gain-clamped and conventional semiconductor optical amplifiers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391464; https://doi.org/10.1117/12.391464


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