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14 July 2000 Non-adiabatic effects in semiconductor waveguides
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391473
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Abstract
The adiabatic elimination of the polarization dynamics often invoked in treatments of pulse propagational and pulse interactions in semiconductor optical waveguides is critically investigated. By employing a systematic expansion of the polarization equation and staying within a third-order [(chi) (3)] regime we are able to derive explicit corrections to the response function due to non-adiabatic effects. Several such effects are identified and analyzed. This provides a unified view of different results reported previously in the literature, but also identifies a new effect which apparently hasn't been analyzed so far. The effect relates to virtual excitation of the total carrier density, as opposed to the well-known adiabatic following effect of individual two-level systems, and we derive simple analytical expressions that relate this effect to the gain and index dispersion. We find it to give a sizable contribution to the well-known instantaneous effects of two-photon absorption and Kerr nonlinearity.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jesper Mork and Antonio Mecozzi "Non-adiabatic effects in semiconductor waveguides", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391473
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