14 July 2000 Optimization of high-power broad-area semiconductor lasers
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Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391441
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States
Design issues relating to high-power broad-area semiconductor lasers are reviewed. Device optimization is performed using a phenomenological model. This model provides a simple means of predicting the laser performance and assessing a high-power laser design. Emphases are placed on parameters that impact the power conversion efficiency,junction temperature, optical intensity, and near field uniformity.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng-Hui Yang, Xiaoguang He, Manoj Kanskar, Stewart Wilson, Alexander Ovtchinnikov, Steven H. Macomber, and Shantanu Gupta "Optimization of high-power broad-area semiconductor lasers", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391441; https://doi.org/10.1117/12.391441

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