Photodetection mechanism in p-channel pseudomorphic MODFET

Jung Il Lee; Hwe-Jong Kim; Dong Myong Kim; Jacques Zimmermann

doi:10.1117/12.391482

14 July 2000 Photodetection mechanism in p-channel pseudomorphic MODFET

Jung Il Lee, Hwe-Jong Kim, Dong Myong Kim, Jacques Zimmermann

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391482
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The use of microwave semiconductor devices as photodetectors or optically controlled circuit elements have attracted growing interest. We have systematically characterized the optical response of p-channel pseudomorphic MODFET as a function of the drain voltage, gate voltage, and optical power of the illumination. Physical mechanisms responsible for the variation of the device characteristics due to the optical illumination are discussed and analytic models are developed for strong non-linear behavior of the threshold voltage and the photoresponsivity with the optical power of the illumination.

Citation Download Citation

Jung Il Lee, Hwe-Jong Kim, Dong Myong Kim, and Jacques Zimmermann "Photodetection mechanism in p-channel pseudomorphic MODFET", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391482

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